Subjects
Applied Mathematics for Electrical Engineering - 3130908
Complex Variables and Partial Differential Equations - 3130005
Engineering Graphics and Design - 3110013
Basic Electronics - 3110016
Mathematics-II - 3110015
Basic Civil Engineering - 3110004
Physics Group - II - 3110018
Basic Electrical Engineering - 3110005
Basic Mechanical Engineering - 3110006
Programming for Problem Solving - 3110003
Physics Group - I - 3110011
Mathematics-I - 3110014
English - 3110002
Environmental Science - 3110007
Software Engineering - 2160701
Data Structure - 2130702
Database Management Systems - 2130703
Operating System - 2140702
Advanced Java - 2160707
Compiler Design - 2170701
Data Mining And Business Intelligence - 2170715
Information And Network Security - 2170709
Mobile Computing And Wireless Communication - 2170710
Theory Of Computation - 2160704
Semester
Semester - 1
Semester - 2
Semester - 3
Semester - 4
Semester - 5
Semester - 6
Semester - 7
Semester - 8
Physics Group - II
(3110018)
Phy-3110018
Winter-2019
BE | Semester
1
Winter - 2019
|
02-01-2020
Total Marks
70
Q1
(a)
Enlist the assumptions of free electron theory.
3 Marks
Unit : Electronic Materials
|
Topic : Free electron theory
Q1
(b)
Give the difference between Direct and Indirect band gap.
4 Marks
Unit : Electronic Materials
|
Topic : E-k diagram, Direct and indirect bandgaps
Q1
(c)
Explain forward and reverse bias conditions in PN junction diode.
7 Marks
Unit : Semiconductors
|
Topic : Carrier generation and recombination, Carrier transport: diffusion and drift, p-n junction
Q2
(a)
Define Intrinsic and extrinsic semiconductor.
3 Marks
Unit : Semiconductors
|
Topic : Intrinsic and extrinsic semiconductors
Q2
(b)
The thermal and electrical conductivity of Cu at 20°C Kare 390 W m
-1
K
-1
and 5.87 x 107 (Ω m)
-1
respectively. Calculate the Lorentz number.
4 Marks
Unit : Electronic Materials
|
Topic : Free electron theory
Q2
(c)
Explain Schottky diode in detail.
7 Marks
Unit : Semiconductors
|
Topic : Metal-semiconductor junction (Ohmic and Schottky), Semiconductor materials of interest for optoelect
OR
Q2
(c)
Explain the dependence of Fermi level on temperature.
7 Marks
Unit : Semiconductors
|
Topic : Dependence of Fermi level on carrier-concentration and temperature (equilibrium carrier statistics)
Q3
(a)
Explain Drude model.
3 Marks
Unit : Light-Semiconductor Interaction
|
Topic : Drude model
Q3
(b)
Fermi energy of a given substance is 7.9 eV. What is the average energy and speed of electron in this substance at 0 K?
4 Marks
Unit : Electronic Materials
|
Topic : Fermi level, Effective mass, Phonons.
Q3
(c)
Explain photovoltaic effect. With required diagrams discuss construction and working of solar cell.
7 Marks
Unit : Light-Semiconductor Interaction
|
Topic : Optical loss and gain; Photovoltaic effect, Exciton
OR
Q3
(a)
Write a short note on excition.
3 Marks
Unit : Light-Semiconductor Interaction
|
Topic : Optical loss and gain; Photovoltaic effect, Exciton
Q3
(b)
Consider two-dimensional square lattice of side 3.0 Å. At what electron momentum values do the sides of first Brillouin zone appear? What is the energy of free electron with this momentum?
4 Marks
Unit : Electronic Materials
|
Topic : Free electron theory
Q3
(c)
Derive an equation of joint density of states.
7 Marks
Unit : Light-Semiconductor Interaction
|
Topic : Joint density of states
Q4
(a)
Define Hall effect. Give its physical significance.
3 Marks
Unit : Measurements
|
Topic : Four-point probe and Van Der Pauw measurements for carrier density
Q4
(b)
2.0 cm wide and 1.0 mm thick copper strip is placed in a magnetic field 1.5 Wb/m
2
perpendicular to the strip. Suppose a current of 200 A is set up in the strip what will be the Hall potential appeared across the strip? (n = 8.4 x 10
28
electrons/m
3
).
4 Marks
Unit : Measurements
|
Topic : Four-point probe and Van Der Pauw measurements for carrier density
Q4
(c)
Discuss UV-VIS method for band gap measurement of semiconductor.
7 Marks
Unit : Measurements
|
Topic : band gap by UV-Vis spectroscopy, absorption/transmission
OR
Q4
(a)
Discuss Fermi golden rule.
3 Marks
Unit : Light-Semiconductor Interaction
|
Topic : Density of states for photons
Q4
(b)
The transmitted intensity is 0.4 times intensity of incident light. If this light is incident on a semiconductor having a thickness of 0.5 cm then find absorption coefficient.
4 Marks
Unit : Measurements
|
Topic : band gap by UV-Vis spectroscopy, absorption/transmission
Q4
(c)
Explain four probe method. Derive an equation to calculate resistivity of a thin sample.
7 Marks
Unit : Measurements
|
Topic : Four-point probe and Van Der Pauw measurements for carrier density
Q5
(a)
Write short note cryotron.
3 Marks
Unit : Superconductivity
|
Topic : Josephson's junction and its application Application of superconductors
Q5
(b)
Explain London's penetration depth.
4 Marks
Unit : Superconductivity
|
Topic : Penetration depth : Magnetic field
Q5
(c)
Give the difference between type 1 and type 2 superconductor.
7 Marks
Unit : Superconductivity
|
Topic : Properties of superconductor
OR
Q5
(a)
Write short note on SQUID.
3 Marks
Unit : Superconductivity
|
Topic : Josephson's junction and its application Application of superconductors
Q5
(b)
Calculate the critical current for a superconducting wire of lead having a diameter of 2 mm at 2 K. Critical temperature for lead is 4 K and H
c
(0) = 6.5 X 10
4
A/m.
4 Marks
Unit : Superconductivity
|
Topic : Effect of magnetic field
Q5
(c)
Explain the properties of superconductors in detail.
7 Marks
Unit : Superconductivity
|
Topic : Properties of superconductor